Epitaxial Growth Equipment
These machines are used to grow thin crystalline layers (epitaxial layers) on semiconductor wafers, essential for manufacturing high-voltage power devices.
LPE-Model SiC Epi Reactor
Epitaxial growth reactor for SiC wafers using vertical design, enabling high uniformity and growth rate for power device production.
Vertical system optimized for high-volume SiC epitaxial layer growth, suitable for mass manufacturing.
Local-Vertical Type SiC Epi Reactor
Local-Horizontal Type SiC Epi Reactor
Horizontal growth reactor often used for research or customized production of SiC wafers.
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